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| NTB5605P Power MOSFET -60 Volt, -18.5 Amp P-Channel, D2PAK Features http://onsemi.com V(BR)DSS -60 V RDS(on) TYP 120 mW @ -5.0 V P-Channel D ID MAX -18.5 A * Designed for Low RDS(on) * Withstands High Energy in Avalanche and Commutation Modes * Pb-Free Packages are Available Applications * * * * Power Supplies PWM Motor Control Converters Power Management G MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State Steady State TA = 25C TA = 25C Symbol VDSS VGS ID PD IDM TJ, TSTG EAS Value -60 $20 -18.5 88 -55 -55 to 175 338 Unit V V A W 1 A C mJ 2 3 D2PAK CASE 418B STYLE 2 4 S MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain tp = 10 ms NTB5605PG AYWW Operating Junction and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A, L = 3.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) 1 Gate 2 Drain 3 Source TL 260 C THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) - Steady State Symbol RqJC Max 1.7 Unit C/W NTB5605P A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 pad size (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu Area 0.41 in2). ORDERING INFORMATION Device NTB5605P NTB5605PG NTB5605PT4 NTB5605PT4G Package D2PAK D2PAK (Pb-Free) D2PAK D2PAK (Pb-Free) 800 Tape & Reel 800 Tape & Reel Shipping 50 Units/Rail 50 Units/Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2005 1 August, 2005 - Rev. 2 Publication Order Number: NTB5605P/D NTB5605P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(Br)DSS V(Br)DSS/TJ IDSS VGS = 0 V VDS = -60 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-to-Source On Resistance Forward Transconductance Drain-to-Source On Voltage VGS(th) RDS(on) gFS VDS(on) VGS = VDS, ID = -250 mA VGS = -5.0 V, ID = -8.5 A VGS = -5.0 V, ID = -17 A VDS = -10 V, ID = -8.5 A VGS = -5.0 V, ID = -8.5 A -1.0 -1.5 120 140 12 -1.3 -2.0 140 V mW S V IGSS TJ = 25C TJ = 125C VGS = 0 V, ID = -250 mA -60 -64 -1.0 -10 "100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = "20 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V IS = -17 A TJ = 25C TJ = 125C -1.55 -1.4 60 VGS = 0 V, dIS/dt = 100 A/ms, IS = -17 A 39 21 0.14 nC ns -2.5 V td(on) tr td(off) tf VGS = -5.0 V, VDD = -30 V, ID = -17 A, RG = 9.1 W 12.5 122 29 75 25 183 58 150 ns Ciss Coss Crss QG(TOT) QGS QGD VGS = -5.0 V, VDS = -48 V, ID = -17 A VGS = 0 V, f = 1.0 MHz, VDS = -25 V 730 211 67 13 4.0 7.0 1190 300 120 22 nC pF Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge trr ta tb QRR 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTB5605P 40 -ID, DRAIN CURRENT (AMPS) 35 30 25 20 15 10 5 0 0 2 4 6 8 1 3 5 7 9 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 10 VGS = -3.5 V VGS = -3 V 0 0 4 6 8 1 2 3 5 7 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 9 VGS = -10 V VGS = -9 V VGS = -8 V VGS = -7 V TJ = 25C 40 -ID, DRAIN CURRENT (AMPS) VGS = -6 V VGS = -5.5 V VGS = -5 V VGS = -4.5 V VGS = -4 V VDS = -10 V TJ = -55C 30 TJ = 25C TJ = 125C 20 10 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 5 10 TJ = -55C 15 20 25 30 TJ = 25C TJ = 125C VGS = -5.0 V 0.25 0.225 0.2 0.175 0.15 0.125 0.1 0.075 0.05 0.025 0 0 TJ = 25C VGS = -5.0 V VGS = -10 V 3 6 9 12 15 18 21 24 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 1 -25 0 25 50 75 100 125 150 5 ID = -8.5 A VGS = -5.0 V -IDSS, LEAKAGE (nA) 1000 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 125C 100 10 10 15 20 25 30 35 40 45 50 55 60 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTB5605P -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 10 Crss 5 -VGS 0 -VDS 5 10 15 20 Coss 8 7 6 5 4 QGS 3 2 1 0 0 4 8 12 Qg, TOTAL GATE CHARGE (nC) ID = -17 A TJ = 25C 0 16 QDS QT VGS VDS 60 VDS = 0 V Ciss VGS = 0 V TJ = 25C C, CAPACITANCE (pF) 45 Crss Ciss 30 15 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 -IS, SOURCE CURRENT (AMPS) 20 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 15 t, TIME (ns) 100 tr tf td(off) 10 10 td(on) VDD = -30 V ID = -17 A VGS = -5.0 V 1 10 RG, GATE RESISTANCE (W) 100 5 1 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 -ID, DRAIN CURRENT (AMPS) VGS = -20 V SINGLE PULSE TC = 25C 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 400 Figure 10. Diode Forward Voltage vs. Current ID = -15 A 350 300 250 200 150 100 50 0 25 50 75 100 125 150 10 dc 10 ms 1 ms 100 ms RDS(on) Limit Thermal Limit Package Limit 1 10 10 ms 100 1 0.1 0.1 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTB5605P r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE 0.1 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 Figure 13. Thermal Response di/dt IS trr ta tb TIME tp IS 0.25 IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 5 NTB5605P PACKAGE DIMENSIONS D2PAK CASE 418B-04 ISSUE J C E -B- 4 V W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 A 1 2 3 S -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M W J TB M VARIABLE CONFIGURATION ZONE L M R N U L P L M STYLE 2: PIN 1. 2. 3. 4. M F VIEW W-W 1 F VIEW W-W 2 F VIEW W-W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTB5605P ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 NTB5605P/D |
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